Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-08-28
2007-08-28
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S906000, C438S296000, C257SE21224
Reexamination Certificate
active
11194794
ABSTRACT:
A method for cleaning a semiconductor substrate forming device isolation layers in a predetermined region of a semiconductor substrate to define active regions; etching predetermined areas of the active regions to form a recess channel region and such that sidewalls of the device isolation layers are exposed; and selectively etching a surface of the recess channel region using a predetermined cleaning solution to clean the semiconductor substrate where the recess channel region has been formed.
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Choi Sang-Jun
Han Dong-Gyun
Hong Chang-Ki
Ko Hyung-Ho
Fourson George
Myers Bigel & Sibley Sajovec, PA
Parker John M.
Samsung Electronics Co,. Ltd.
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