Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation
Reexamination Certificate
2005-04-12
2005-04-12
Meeks, Timothy (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Ion plating or implantation
C427S569000, C427S553000, C427S554000, C427S255370, C427S255394, C438S769000, C438S770000, C438S778000, C438S783000
Reexamination Certificate
active
06878415
ABSTRACT:
A method is provided for forming a thin film layer of a substrate. The method includes the steps of forming a thin surface layer containing a dopant material on the substrate, and short-time thermal processing of the doped surface layer with processing parameters selected to produce a reaction between the surface layer and the dopant material to form a dielectric film, a metal film or a silicide film. In one embodiment, short-time thermal processing is implemented by flash rapid thermal processing of the doped surface layer. In another embodiment, short-time thermal processing is implemented by sub-melt laser processing of the doped surface layer. The process may be used for forming dielectric layers having a thickness of 50 angstroms or less.
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Meeks Timothy
Varian Semiconductor Equipment Associates Inc.
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