Methods for anisotropic etching of (100) silicon

Details Methods for anisotropic etching of (100) silicon Methods for anisotropic etching of (100) silicon

1993-07-09

1995-08-15

Hearn, Brian E.

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask resist contains inorganic material

216 99, H01L 21308

Patent

active

054416000

ABSTRACT:
Extremely high aspect ratio vertical walls may be constructed using sodium hydroxide etches of (100) orientation silicon. Mask bodies 18a, 18b and 18c are used to form vertical wall sections 20a, 20b and 20c from a silicon substrate 10.

REFERENCES:
patent: 3909325 (1975-09-01), Church et al.
patent: 4612408 (1986-09-01), Moddel et al.
patent: 4662059 (1987-05-01), Smeltzer et al.
patent: 4994142 (1991-02-01), Appelbaum
patent: 5207866 (1993-05-01), Lue et al.
patent: 5238877 (1993-08-01), Russell
Backlund et al, J. Micromech. Microeng, vol. 2, No. 2, Jun. 1992, pp. 75-79.
G. Kaminsky, "Micromachining of Silicon Mechanical Structures", J. Vac. Sci. Technol. B, vol. 3, No. 4, Jul/Aug 1985, pp. 1015-1024.

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