Methods for aligning a surface of an active retainer ring...

Abrading – Abrading process

Reexamination Certificate

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Details

C451S397000, C451S288000, C451S285000

Reexamination Certificate

active

06843707

ABSTRACT:
CMP methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface of a wafer carrier so that a wafer axis of rotation is gimballed for universal movement relative to a spindle axis of rotation of a wafer spindle. An operation using a retainer ring limits wafer movement on the carrier surface perpendicular to the wafer axis. Another operation limits a direction of permitted movement between the wafer carrier and the retainer ring to only movement parallel to the wafer axis, so that a wafer plane and a retainer ing may be co-planar.

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