Methods, devices and compositions for depositing and...

Semiconductor device manufacturing: process – Having biomaterial component or integrated with living organism

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S765000, C117S068000, C977S762000, C977S827000

Reexamination Certificate

active

07067328

ABSTRACT:
Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.

REFERENCES:
patent: 5505928 (1996-04-01), Alivisatos et al.
patent: 6225198 (2001-05-01), Alivisatos et al.
patent: 6306736 (2001-10-01), Alivisatos et al.
patent: 6849558 (2005-02-01), Schaper
patent: 6866801 (2005-03-01), Mau et al.
patent: 2002/0179434 (2002-12-01), Dai et al.
patent: 2003/0089899 (2003-05-01), Leiber et al.
patent: 2003/0234465 (2003-12-01), Chen et al.
patent: 2004/0005723 (2004-01-01), Empedocles et al.
patent: WO 02/017362 (2002-02-01), None
patent: WO 02/080280 (2002-10-01), None
Greene et al. (“Low-temperature wafer scale production of ZnO nanowire arrays”, Angew. Chem. Int. Ed. 42, 3031-3034, 2003).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods, devices and compositions for depositing and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods, devices and compositions for depositing and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods, devices and compositions for depositing and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3616711

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.