Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-08-16
2005-08-16
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S230030, C365S230080
Reexamination Certificate
active
06930943
ABSTRACT:
Memory cells in a memory device are refreshed by selecting a first memory cell having a first refresh period to be refreshed. The first memory cell and a second memory cell having a second refresh period together are refreshed responsive to selecting the first memory cell to be refreshed. A circuit for controlling refreshing of memory cells in a memory devices includes an address register that stores the address of a first memory cell having a first refresh period. A comparison circuit compares an input address with the output of the address register and outputs a control signal indicative of a result of the comparison. An address buffer outputs addresses for refreshing the first memory cell and a second memory cell having a second refresh period together responsive to the control signal indicating a match between the input address and the address of the first memory cell.
REFERENCES:
patent: 5867439 (1999-02-01), Asakura et al.
patent: 5999472 (1999-12-01), Sakurai
Hoang Huan
Myers Bigel & Sibley & Sajovec
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