Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-02-23
2009-12-01
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S435000, C438S294000, C438S295000, C438S296000
Reexamination Certificate
active
07625807
ABSTRACT:
The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.
REFERENCES:
patent: 5741740 (1998-04-01), Jang et al.
patent: 5989978 (1999-11-01), Peidous
patent: 6180492 (2001-01-01), Shih et al.
patent: 6191004 (2001-02-01), Hsiao
patent: 6323106 (2001-11-01), Huang et al.
patent: 6326282 (2001-12-01), Park et al.
patent: 6468853 (2002-10-01), Balasubramanian et al.
patent: 6656852 (2003-12-01), Rotondaro et al.
patent: 6660613 (2003-12-01), Kim et al.
patent: 6664195 (2003-12-01), Jang et al.
patent: 6667246 (2003-12-01), Mitsuhashi et al.
patent: 6734082 (2004-05-01), Zheng et al.
patent: 6881645 (2005-04-01), Ahn et al.
patent: 6958513 (2005-10-01), Wang
patent: 7012027 (2006-03-01), Perng et al.
patent: 7022583 (2006-04-01), Leng et al.
patent: 7026714 (2006-04-01), Cunningham
patent: 7029987 (2006-04-01), Kim
Chambers James J.
Olsen Leif Christian
Quevedo-Lopez Manuel A.
Brady III Wade J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Thai Luan C
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