Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-06-28
2011-06-28
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S622000, C257SE21218, C257SE31092, C250S370010, C438S056000
Reexamination Certificate
active
07968959
ABSTRACT:
Gray-tone lithography technology is used in combination with a reactive plasma etching operation in the fabrication method and system of a thick semiconductor drift detector. The thick semiconductor drift detector is based on a trench array, where the trenches in the trench array penetrate the bulk with different depths. These trenches form an electrode. By applying different electric potentials to the trenches in the trench array, the silicon between neighboring trenches fully depletes. Furthermore, the applied potentials cause a drifting field for generated charge carriers, which are directed towards a collecting electrode.
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Christophersen Marc
Phlips Bernard F.
Quach Tuan N.
Ressing Amy L.
The United States of America as represented by the Secretary of
Young John Leonard
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