Static information storage and retrieval – Read/write circuit – For complementary information
Reexamination Certificate
2006-10-04
2009-12-08
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Read/write circuit
For complementary information
C365S205000
Reexamination Certificate
active
07630257
ABSTRACT:
One aspect of the invention relates to a method for accessing a memory device. One embodiment relates to a method for accessing a memory device. In the method during a read operation, one data value is provided on a local IO line while complimentary local IO line that is associated with the local IO line is inactivated. During a write operation, another data value is provided on the local IO line and a complimentary data value is provided on the complimentary local IO line. Other systems and methods are also disclosed.
REFERENCES:
patent: 5438543 (1995-08-01), Yoon
patent: 6373753 (2002-04-01), Proebsting
patent: 6445621 (2002-09-01), Heightley
patent: 6757206 (2004-06-01), McAdams et al.
patent: 2001/0010642 (2001-08-01), Naffziger et al.
patent: 2004/0266028 (2004-12-01), Rodriguez et al.
patent: 2005/0018466 (2005-01-01), Kurth et al.
patent: 2005/0036367 (2005-02-01), Merritt et al.
patent: 2005/0063225 (2005-03-01), Takashima
patent: 2005/0254282 (2005-11-01), Summerfelt et al.
patent: 2005/0276089 (2005-12-01), Madan et al.
patent: 2006/0082478 (2006-04-01), Keeth et al.
patent: 2006/0133129 (2006-06-01), Rodriguez et al.
patent: 2006/0146588 (2006-07-01), Rodriguez et al.
patent: 2006/0146590 (2006-07-01), Fukushi et al.
patent: 2007/0036012 (2007-02-01), Madan et al.
“An 8Mb 1T1C Ferroelectric Memory with Zero Cancellation and Micro-Granularity Redundancy”, Jarrod Eliason, Sudhir Madan, Hugh McAdams, Glen Fox, Ted Moise, Changgui Lin, Kurt Schwartz, Jim Gallia, Edwin Jabillo, Bill Kraus and Scott Summerfelt, IEEE Journal of Solid State Physica, vol. 39, No. 4, Apr. 2004, 4 pgs.
“A 64-Mb Embedded FRAM Utilizing a 130-nm 5LM Cu/FSG Logic Process”, Hugh P. McAdams, Randy Acklin, Terry Blake, Xiao-Hong Du, Jarrod Eliason, John Fong, William F. Kraus, David Liu, Sudhir Madan, Ted Moise, Sreedhar Natarajan, Ning Qian, Yunchen Qiu, Keith A Remack, John Rodriguez, John Roscher, Anand Seshadri and Scott R. Summerfelt, IEEE Journal of Solid-State Circuits, vol. 39, No. 4, Apr. 2004, 11 pgs.
“A Current-Based Reference-Generation Scheme for 1T-1C Ferroelectric Random-Access Memories”, Joseph Wai Kit Siu, Yadollah Eslami, Ali Sheikholeslami, P. Glenn Gulak Toru Endo and Shoichiro Kawashima, IEEE Journal of Solid-Stage Circuits, vol. 38, No. 3, Mar. 2003,9 pgs.
Lin Sung-Wei
Madan Sudhir Kumar
Mcadams Hugh P.
Brady III Wade J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran Michael T
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