Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Yield
Reexamination Certificate
2007-10-23
2011-10-18
Memula, Suresh (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Design of semiconductor mask or reticle
Yield
C716S051000, C716S054000
Reexamination Certificate
active
08042070
ABSTRACT:
Impact on parametric performance of physical design choices for transistors is scored for on-current and off-current of the transistors. The impact of the design parameters are incorporated into parameters that measure predicted shift in mean on-current and mean off-current and parameters that measure predicted increase in deviations in the distribution of on-current and the off-current. Statistics may be taken at a cell level, a block level, or a chip level to optimize a chip design in a design phase, or to predict changes in parametric yield during manufacturing or after a depressed parametric yield is observed. Further, parametric yield and current level may be predicted region by region and compared with observed thermal emission to pinpoint any anomaly region in a chip to facilitate detection and correction in any mistakes in chip design.
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Chang Paul
Chidambarrao Dureseti
Culp James A.
Elakkumanan Praveen
Hibbeler Jason
International Business Machines - Corporation
Memula Suresh
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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