Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-02-25
1999-07-06
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257743, 257522, H01L 2348, H01L 2352, H01L 2940
Patent
active
059201215
ABSTRACT:
A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with aluminum wires. Making the aluminum wires flush, or coplanar, with underlying insulation requires digging trenches in the insulation, and then filling the trenches with aluminum to form the aluminum wires. Trench digging is time consuming and costly. Moreover, aluminum has higher electrical resistance than other metals, such as gold. Accordingly, the invention provides a new "self-trenching" or "self-planarizing" method of making coplanar gold wires. Specifically, one embodiment forms a first layer that includes silicon and germanium; oxidizes a region of the first layer to define an oxidized region and a non-oxidized region; and reacts gold with the non-oxidized region. The reaction substitutes, or replaces, the non-oxidized region with gold to form gold wires coplanar with the first layer. Another step removes germanium oxide from the oxidized region to form a porous insulation having a very low dielectric constant, thereby reducing capacitance. Thus, the present invention not only eliminates the timing-consuming, trench-digging step of conventional methods, but also reduces resistance and capacitance which, in turn, enable faster, more-efficient integrated circuits.
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Ahn Kie Y.
Farrar Paul A.
Forbes Leonard
Clark S. V.
Martin-Wallace Valencia
Micro)n Technology, Inc.
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