Methods and forming structures, structures and apparatuses...

Details Methods and forming structures, structures and apparatuses... Methods and forming structures, structures and apparatuses...

2006-11-28

2006-11-28

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S700000, C438S680000, C438S508000

Reexamination Certificate

active

07141495

ABSTRACT:
Methods of forming a contact structure, contact structures and apparatuses applied thereto are disclosed. The method of forming a contact structure forms a dielectric layer on a substrate. A metal contact with metal oxide thereon is formed in the dielectric layer. The solubility of the metal oxide is enhanced by using H2O with a temperature higher than about 10° C. or a chemical with a temperature higher than about 15° C.

REFERENCES:
patent: 5676590 (1997-10-01), Hiraoka
patent: 5906949 (1999-05-01), Sato
patent: 6294467 (2001-09-01), Yokoyama et al.
patent: 6825156 (2004-11-01), Lee et al.
patent: 6921712 (2005-07-01), Soininen et al.
patent: 2002/0052115 (2002-05-01), Crevasse et al.
patent: 2004/0121582 (2004-06-01), Lee
patent: 2005/0215053 (2005-09-01), Soininen et al.

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