Methods and devices using group III nitride compound...

Details Methods and devices using group III nitride compound... Methods and devices using group III nitride compound...

2005-04-19

2005-04-19

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S606000, C438S761000

Reexamination Certificate

active

06881651

ABSTRACT:
A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula AlxGayIn1−x−yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiO2layer, and grows epitaxially on the SiO2layer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained.

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