Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-09-05
2006-09-05
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S225500
Reexamination Certificate
active
07102919
ABSTRACT:
Methods for determining writing current for memory cells. A first reference current is applied to a first operative line to switch the memory cell to a first state. A second reference current is applied to a second operative line crossing the first operative line to switch the memory cell to a second state. A first writing current is obtained according to a first ratio and the first reference current. A second writing current is obtained according to a second ratio and the second reference current. The memory cell is programmed by applying the first writing current to the first operative line and applying the second writing current to the second operative line.
REFERENCES:
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6760266 (2004-07-01), Garni et al.
patent: 6967366 (2005-11-01), Janesky et al.
Shyu Der-Shin
Sung Hung-Cheng
Nguyen Tuan T.
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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