Methods and compositions for preparing tensile strained Ge...

Details Methods and compositions for preparing tensile strained Ge... Methods and compositions for preparing tensile strained Ge...

2011-03-29

2011-03-29

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S022000, C438S057000, C438S285000, C438S479000, C257SE21116

Reexamination Certificate

active

07915104

ABSTRACT:
The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge1-ySnybuffer layer on a semiconductor substrate and forming a tensile strained Ge layer on the Ge1-ySnybuffer layer using an admixture of (GeH3)2CH2and Ge2H6in a ratio of between 1:10 and 1:30. The disclosure further provides semiconductor structures having highly strained Ge epilayers (e.g., between about 0.15% and 0.45%) as well as compositions comprising an admixture of (GeH3)2CH2and Ge2H6in a ratio of between about 1:10 and 1:30. The methods herein provide, and the semiconductor structure provide, Ge epilayers having high strain levels which can be useful in semiconductor devices for example, in optical fiber communications devices.

REFERENCES:
patent: 2988427 (1961-06-01), Jenker et al.
patent: 4777023 (1988-10-01), Fieselmann et al.
patent: 4910153 (1990-03-01), Dicksen et al.
patent: 7238596 (2007-07-01), Kouvetakis et al.
patent: 7589003 (2009-09-01), Kouvetakis et al.
patent: 7594967 (2009-09-01), Vineis et al.
patent: 7598513 (2009-10-01), Kouvetakis et al.
patent: 2005/0040411 (2005-02-01), Wada et al.
patent: 2007/0105251 (2007-05-01), Liu et al.
patent: 2007/0297967 (2007-12-01), Kouvetakis et al.
patent: 2008/0113186 (2008-05-01), Kouvetakis et al.
patent: 2009/0050935 (2009-02-01), Kouvetakis et al.
patent: 2010/0012972 (2010-01-01), Kouvetakis et al.
patent: 4306106 (1994-09-01), None
patent: 0430280 (1991-06-01), None
patent: 2004036631 (2004-04-01), None
patent: 2006031240 (2006-03-01), None
patent: 2006031257 (2006-03-01), None
patent: 2007062096 (2007-05-01), None
Takeuchi (2007) Semicond Sci Technol, 22:S231-S235.
Soref (1993) Proceedings of IEEE, 81(12):1687-1706.
Soref (1996) J Vac Sci Technol, A 14(3): 913-918.
Soref (1993) Superlattices and Microstructures 14(2/3):189-193.
Green (2001) Prog Photovolt Res Appl 9:123-135.
Jalali (2006) IEEE Microwave Magazine 58-68.
Morrison (2005) Power Electronics Technology, 44- 46.
Wietler (2006) Thin Solid Films 508:6-9.
Reiffel (1955) Physical Review 97(6):1714-1716.
Bills (1964) J Phys Chem 68(4):806-810.
Schwarz-Selinger (2002) Physical Review B 65:125317-1.
Kelly (2006) Appl. Phys. Lett., 88, 152101.
Kelly (2007) Semicond. Sci. Technol. 22, S204-S207.
Shang (2006) IBM Journal of Research and Development 50 (4/5): 377-386.
Anastassakis (1990) Physical Review B 41(11): 7529-7535.
De Jaeger (2005) Microelectronic Engineering 80: 26-29.
Nakashima (2006) J Appl Phys 99:053512.
Anastassakis (1993) Solid State Communications 88(11/12):1053-1058.
Cerderia (1972) Physical Review B 5(2):580-593.
Fitzgerald (1997), Thin Solid Films, 294: 3-10.
Wietler (2005) App Phys Lett 87:182102.
Jutzi (2005) IEEE Photonics Technol Lett 17(7):1510-1512.
Kuo (2005) Nature 437: 1334-1336.
Lee (2005) J Appl Phys 97:011101.
Bauer (2003) Solid State Communications 127:355-359.
Cannon (2004) Appl Phys Lett 84(6): 906-908.
Ishikawa (2003) Appl Phys Lett 82(13):2044-2046.
Liu (2004) Physical Review B 70:155309.
Liu (2005) Appl. Phys. Lett. 87:103501.
Oh (2002) IEEE J. Quantum Electron 38(9):1238.
Cook (2004) Thin Solid Films 455-456:217-221.
Costa (2007) Physical Review B 76:035211.
Kouvetakis (2007) J Mater Chem 17:1649-1655.
Roucka (2007) J Appl Phys 101:013518.
Tice (2007) J Am Chem Soc 129(25): 7950-7960.
Bauer (2003) Appl Phys Lett 83(17):3489-3491.
Menendez (2004) Appl Phys Lett 85(7):1175-1177.
Roucka (2005) Appl Phys Lett 86:191912.
D'Costa (2006) Physical Review B 73:125207.
Aella (2004) Appl Phys Lett 84(6):888-890.
Bauer (2002) Appl Phys Lett 81(16):2992-2994.
Bauer (2003) Appl Phys Lett 83(11):2163-2165.
Kouvetakis (2006) Annu Rev Mater Res. 36:497-554.
Wistey (2007) Appl Phys Lett 90:082108.
Fang (2007) Chem Mater 19(24):5910-5925.
Fang (2007) Appl Phys Lett 90: 061915.
Luan (1999) Appl. Phys. Lett. 75: 2909.
Currie (1998) Appl. Phys. Lett. 72: 1718.
Fitzgerald, (1992) J. Vac. Sci. Technol. B 10: 1807.
Stirman (2004) Appl. Phys. Lett. 84: 2530.
Cunningham (1991) Appl. Phys. Lett. 59: 3574.
Tolle (2006) Appl. Phys. Lett. 88, 252112.
Hu C-W et al., “Low-temperature pathways to Ge-rich Si1-xGex alloys via single-source hydride chemistry” , Applied Physics Letters, AIP, American Institute of Physics, vol. 87, No. 18, pp. 181903, 2005.
Ritter C J et al., “Synthesis and Fundamental Studies of (H2Ge)xSiH4-x Molecules: Precursors to Semiconductor Hetero- and Nanostructures on Si”, Journal of the American Chemical Society, vol. 127, pp. 9855-9864, 2005.
Hu Changwu et al., “Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH3)4-nSiHn hydrides”, Applied Physics Letters, vol. 87, No. 8, pp. 83101, 2005.
International Search Report and Written Opinion, PCT/US2009/038568, mailed Aug. 6, 2009.
Chizmeshya, et al., J. Am. Chem. Soc. 2006,128 (21), 6919-6930.
Gersten, et al., The Physics and Chemistry of Materials, John Wiley & Sons; New York, 2001, pp. 96-100.
Dutton, et al., Inorganic Chemistry, 1968,7(9), pp. 1735-1739.
Lobreyer, T., Chem Ber, 1991, 124(11),2405-2410.
Mackay, K.M., et ai, J. Chem Soc, 1969, A, 2938.
Mooney, P. M.; et al. Annu. Rev. Mater. Sci. 2000, 30, 335.
Tromp, R. M.; et al. Annu. Rev. Mater. Sci. 2000, 30, 431.
Brunner, K., et al., Rep. Prog. Phys. 2002, 65(1),27-72.
Kuo, Y-H; et al. Nature 2005, 437,1334-1336.
Bean, J, C; et al. J. Vac Sci. Technol. 1984, A 2(2), 436-440.
Greve, DW., Mat. Sci. Eng., 1993, B18(1), 22-51.
Konig, U., et al., IEEE Electron Device Lett, 1993, 14(4),205-207.
M. L. Lee, J. Appl. Phys. 2003, 94, 2590-2596.
R. Hamond, Electron. Lett. 1999,35(18),1590-1591.
Y. J. Mii, Appl. Phys. Lett., 1991,59(13),1611-1613.
P. M. Mooney, Appl. Phys. Lett., 1995,67(16),2373-2375.
K. K. Linder, Appl. Phys Lett., 1997,70(24),3224-3226.
C. S. Peng, Appl. Phys. Lett., 1998,72(24),3160-3162.
Lee, M. L.; et al. J. Vac. Sci.Technol. 2004, B 22 (1),158.
E. Kasper, et al., Appl Surf. Sci. 2004, 224, 3.
Currie, M. T.; et al. Appl. Phys. Lett. 1998,72 (14),1718.
G. Eres, etal., J. Vac. Sci. Technol., 1993, A11(5), 2463-2471.
T. R. Bramblett, et al. J. Appl. Phys., 1995,77(4),1504-1513.
J. Takahashi, et al., Appl. Phys. Lett., 1991,58(24),2776-2778.
Nijhawan, S.; et al. J. Aerosol Science 2003,34,691-711.
Soldner, M.; et al. J. Organometallic Chern. 1996, 521, 295.
Urban, J.; et al. J. Chem. Phys. Lett. 1997,264,441-448.
Albinsson, B.; et al. J. Phys. Chem. 1996, 100, 8681.
Jasinski, J. M.; et al. Chern. Rev. 1995,95,1203.
Cullis, A.G.; et al. J. Cryst. Growth 1992, 123, 333.
Andrews et al. (1966) J. Chem. Soc. (a), p. 46-48.
Hu, Changwu, et al., “Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of H3SiGeH3 and Ge(SiH3)4”, Chemistry of Materials, Sep. 23,2003,15(19):3569-3572.
Lobreyer, T., et al., “Synthesis and Structure of Tetrasilylgermane, Ge(SiH3)4, and Other Silylgermanes”, Angew. Chem. Int. Ed. Engl., 1993,32(4):586-587.
Phillips, et al., Anal. Chem. 1963, 35(4): 505-510.
Phillips, et al., Z. Analyt. Chem. 1963, 197: 202-211.
Van Dyke et al., “The Preparation and Characterization of Silylgermylmethane and Some of Its Inorganic Derivatives”; Inorganic Chemistry, vol. 11, No. 2, pp. 408-412, 1972.

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