Methods and compositions for preparing Ge/Si semiconductor...

Details Methods and compositions for preparing Ge/Si semiconductor... Methods and compositions for preparing Ge/Si semiconductor...

2011-03-22

2011-03-22

Huynh, Andy (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S763000, C438S765000, C438S933000, C427S255230, C427S255260, C427S255350

Reexamination Certificate

active

07910468

ABSTRACT:
The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge layer on a semiconductor substrate using an admixture of (a) (GeH3)2CH2and Ge2H6; (b) GeH3CH3and Ge2H6; or (c) (GeH3)2CH2, GeH3CH3and Ge2H6, wherein in all cases, Ge2H6is in excess. The disclosure further provides semiconductor structures formed according to the methods of the invention as well as compositions comprising an admixture of (GeH3)2CH2and/or GeH3CH3and Ge2H6in a ratio of between about 1:5 and 1:30. The methods herein provide, and the semiconductor structures provide, Ge layers formed on semiconductor substrates having threading dislocation density below 105/cm2which can be useful in semiconductor devices.

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