Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2006-04-18
2006-04-18
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S189090, C365S230060
Reexamination Certificate
active
07031209
ABSTRACT:
A method of testing the programmability of a memory cell is disclosed. The memory cell comprises a select transistor and a data storage element. The method comprises applying a test voltage across the data storage element. The select transistor is turned on. Finally, a current flow through the data storage element when the test voltage is applied is measured. A test positive signal is indicated if the current flow is greater than a reference.
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Fliesler Michael David
Fong David
Peng Jack Zezhong
Wang Jianguo
Ye Fei
Elms Richard
Kilopass Technology, Inc.
Nguyen Hien
Perkins Coie LLP
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