Methods and circuits for single-memory dynamic cell multivalue d

Details Methods and circuits for single-memory dynamic cell multivalue d Methods and circuits for single-memory dynamic cell multivalue d

1998-08-06

1999-12-21

Hoang, Huan

Static information storage and retrieval

Systems using particular element

Ternary

365149, 365205, G11C 1156

Patent

active

060057998

ABSTRACT:
A multivalue dynamic random access memory cell and method therefor are provided. Sense circuitry for sensing a most significant bit (MSB) and a least significant bit (LSB) of a binary data value are coupled to an unsegmented complementary bitline pair. The binary data is represented by a multilevel voltage stored on a storage element in the DRAM cell. A reference signal is provided to the sense circuitry, wherein the reference signal is independent of a precharge on the bitline pair. Cross-coupling elements offset the reference signal in response to the sensing of the MSB, whereby the voltage levels corresponding to the LSB are sensed. Following a read, the multilevel data value is restored on the storage element by a restore/write unit including a programmable voltage supply. The detected MSB/LSB pair are input to the restore/write unit which outputs the corresponding voltage level to the DRAM cell. A write is effected using the same restore/write unit with the binary datum to be stored input to the restore/write unit.

REFERENCES:
patent: 5729490 (1998-03-01), Calligaro et al.
patent: 5751634 (1998-05-01), Itoh
Okuda et al., A Four-Level Storage 4-Gb DRAM, IEEE Journal of Solid State Circuits, vol. 2, No. 11, pp. 1743-1747, Nov. 1997.

Affiliated with

Also associated with

Rating

Methods and circuits for single-memory dynamic cell multivalue d does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods and circuits for single-memory dynamic cell multivalue d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and circuits for single-memory dynamic cell multivalue d will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-511678