Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2005-12-06
2008-09-02
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S185190, C365S185180
Reexamination Certificate
active
07420856
ABSTRACT:
Methods of generating a program voltage for programming a non-volatile memory device include generating an initial voltage and generating a first ramping voltage in response to the initial voltage. The first ramping voltage has a ramping speed slower than the ramping speed of the initial voltage. A second ramping voltage is generated in response to the first ramping voltage. The second ramping voltage has a lower ripple than the first ramping voltage. The second ramping voltage is output as a program voltage for programming a non-volatile memory device. A program voltage generating circuit includes a program voltage generating unit configured to generate an initial voltage, a ramping circuit configured to generate a first ramping voltage responsive to the initial voltage, and a voltage controlling unit configured to generate a second ramping voltage having relatively low ripple and to output the first ramping voltage or the second ramping voltage responsive to a voltage level of the first ramping voltage. Semiconductor memory devices including program voltage generating circuits are also disclosed.
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Notice to File a Response/Amendment to the Examination Report for Korean Patent Application No. 10-2004-0108789 mailed on Apr. 28, 2006.
Chae Dong-Hyuk
Lim Young-Ho
Hoang Huan
Myers Bigel & Sibley & Sajovec
Tran Anthan T
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