Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2008-05-05
2010-12-07
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S185080, C365S185190
Reexamination Certificate
active
07848158
ABSTRACT:
Methods and apparatuses for programming non-volatile semiconductor memory devices by using modulated pulses are disclosed. An apparatus may have a pulse generator, to create a sequence of pulses and set a threshold voltage of a non-volatile memory cell, and a pulse coupler. The apparatus may have a threshold verifier capable of verifying that the threshold voltage is set within an acceptable voltage range of a target threshold voltage. A pulse width modulator in some apparatuses may modulate the pulse durations early in the sequence when programming fast bits and late in the sequence when programming slow bits. An apparatus may generate a sequence of pulses, apply the sequence of pulses to a memory cell to set a threshold voltage of the memory cell, and modulate one or more of pulses in the sequence the parameters of pulse duration, pulse separation time, and step voltage magnitude.
REFERENCES:
patent: 6353559 (2002-03-01), Hasegawa et al.
patent: 6961279 (2005-11-01), Simko
patent: 7212441 (2007-05-01), Yamazoe et al.
patent: 7545684 (2009-06-01), Nakagawa et al.
Di Francesco Walter
Moschiano Violante
Santin Giovanni
Vali Tommaso
Charpiot Garland D.
Luu Pho M
Micron Technologies, Inc.
Schubert Law Group PLLC
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