Coating apparatus – Gas or vapor deposition
Reexamination Certificate
2006-12-20
2011-10-25
Kackar, Ram (Department: 1716)
Coating apparatus
Gas or vapor deposition
C118S692000, C118S7230AN, C156S345260, C156S345330, C216S067000, C427S569000
Reexamination Certificate
active
08043430
ABSTRACT:
Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
REFERENCES:
patent: 5820723 (1998-10-01), Benjamin et al.
patent: 6051100 (2000-04-01), Walko, II
patent: 6129808 (2000-10-01), Wicker et al.
patent: 6176969 (2001-01-01), Park et al.
patent: 6206976 (2001-03-01), Crevasse et al.
patent: 6261408 (2001-07-01), Schneider et al.
patent: 6362110 (2002-03-01), Marks
patent: 6408786 (2002-06-01), Kennedy et al.
patent: 6433484 (2002-08-01), Hao et al.
patent: 6561480 (2003-05-01), Komiya et al.
patent: 6744212 (2004-06-01), Fischer et al.
patent: 6823815 (2004-11-01), Han et al.
patent: 6932111 (2005-08-01), Ishigaki
patent: 7255773 (2007-08-01), Ogasawara et al.
patent: 2001/0014540 (2001-08-01), Shan et al.
patent: 2003/0010447 (2003-01-01), Tzu
patent: 2004/0206309 (2004-10-01), Bera et al.
patent: 2005/0241763 (2005-11-01), Huang et al.
patent: 2005/0263070 (2005-12-01), Fink
patent: 2006/0244304 (2006-11-01), Steinke et al.
patent: 09-178000 (1997-07-01), None
patent: 10-2002-0004623 (2002-01-01), None
patent: 1020020004623 (2002-01-01), None
Search Report and Written Opinion mailed Nov. 19, 2009 in corresponding Singapore Patent Appln. No. 200904124-5.
Search and Examination Report mailed Nov. 19, 2010 for Singapore Appln. No. 200904124-5.
International Search Report and Written Opinion dated Jun. 18, 2008 for PCT/US2007/025831.
SG Search and Examination Report dated May 20, 2010 for Singapore Appln. No. 200904124-5.
Antolik Jerrel K.
Dhindsa Rajinder
Stevenot Scott
Buchanan & Ingersoll & Rooney PC
Chandra Satish
Kackar Ram
Lam Research Corporation
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