Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2006-10-31
2006-10-31
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S185010, C365S185080
Reexamination Certificate
active
07130213
ABSTRACT:
Various apparatuses and methods in which a dual-polarity non-volatile memory cell includes a sense mode component and a charge mode component. The sense mode component communicates information stored in the dual-polarity non-volatile memory cell during a read operation. The charge mode component facilitates storing of the information stored in the dual-polarity non-volatile memory cell. The charge mode component includes a first coupling capacitor and a second tunneling capacitor in a first well, and a first tunneling capacitor and a second coupling capacitor in a second well.
REFERENCES:
patent: 4375086 (1983-02-01), Van Velthoven
patent: 4467457 (1984-08-01), Iwahashi et al.
patent: 4672580 (1987-06-01), Yau et al.
patent: 4807188 (1989-02-01), Casagrande
patent: 4884241 (1989-11-01), Tanaka et al.
patent: 4951257 (1990-08-01), Imamiya et al.
patent: 4970691 (1990-11-01), Atsumi et al.
patent: 5027171 (1991-06-01), Reedy
patent: 5251171 (1993-10-01), Yamauchi
patent: 5253196 (1993-10-01), Shimabukuro et al.
patent: 5299162 (1994-03-01), Kim et al.
patent: 5331597 (1994-07-01), Tanaka
patent: 5424000 (1995-06-01), Winicov et al.
patent: 5430670 (1995-07-01), Rosenthal
patent: 5587945 (1996-12-01), Lin et al.
patent: 5638325 (1997-06-01), Hamamoto
patent: 5668752 (1997-09-01), Hashimoto
patent: 5732022 (1998-03-01), Kato et al.
patent: 5742542 (1998-04-01), Lin et al.
patent: 5761121 (1998-06-01), Chang
patent: 5768186 (1998-06-01), Ma
patent: 5781489 (1998-07-01), Okamoto
patent: 5801076 (1998-09-01), Ghneim et al.
patent: 5805013 (1998-09-01), Ghneim et al.
patent: 5808953 (1998-09-01), Kim et al.
patent: 5854114 (1998-12-01), Li et al.
patent: 5885870 (1999-03-01), Maiti et al.
patent: 5942780 (1999-08-01), Barsan et al.
patent: 5999466 (1999-12-01), Marr et al.
patent: 6018477 (2000-01-01), Wang
patent: 6046926 (2000-04-01), Tanaka et al.
patent: 6064105 (2000-05-01), Li et al.
patent: 6069382 (2000-05-01), Rahim
patent: 6084820 (2000-07-01), Raszka
patent: 6094394 (2000-07-01), La Rosa
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6144581 (2000-11-01), Diorio et al.
patent: 6295226 (2001-09-01), Yang
patent: 6324097 (2001-11-01), Chen et al.
patent: 6330186 (2001-12-01), Tanaka
patent: 6331951 (2001-12-01), Bautista, Jr. et al.
patent: 6337808 (2002-01-01), Forbes
patent: RE37593 (2002-03-01), Etoh et al.
patent: 6370061 (2002-04-01), Yachareni et al.
patent: 6407946 (2002-06-01), Maruyama et al.
patent: 6417728 (2002-07-01), Baschirotto et al.
patent: 6445614 (2002-09-01), Tsai et al.
patent: 6473356 (2002-10-01), Raszka
patent: 6631087 (2003-10-01), Di Pede et al.
patent: 6674665 (2004-01-01), Mann et al.
patent: 6788574 (2004-09-01), Han et al.
patent: 6842375 (2005-01-01), Raszka
patent: 6992938 (2006-01-01), Shubat et al.
patent: 2001/0028590 (2001-10-01), Ishikawa et al.
McPartland et al., “1.25 Volt, Low Cost, Embedded FLASH Memory for Low Density Applications”, 2000 Symposium on VLSI Circuits Digest of Technical Papers, pp. 158-161.
Simon J. Lovett, “The Nonvolatile Cell Hidden in Standard CMOS Logic Technologies”, IEEE Transactions on Electron Devices, vol. 48, No. 5, May 2001, pp. 1017-1018.
Ohsaki et al., “A Single Polysilicon wafer EEPROM Cell Structure for Use in Standard CMOS Processes”, IEEE Journal of Solid-State Circuits, vol. 29*, No. 3, Mar. 1994, pp. 311-316.
Auduong Gene N.
Blakely , Sokoloff, Taylor & Zafman LLP
Virage Logic Corporation
LandOfFree
Methods and apparatuses for a dual-polarity non-volatile... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods and apparatuses for a dual-polarity non-volatile..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and apparatuses for a dual-polarity non-volatile... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3689320