Methods and apparatus to provide voltage control for SRAM...

Static information storage and retrieval – Read/write circuit – Particular write circuit

Reexamination Certificate

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C365S189090, C365S204000, C365S195000, C365S194000, C365S156000

Reexamination Certificate

active

07379354

ABSTRACT:
Methods and apparatus to control voltage output of a write assist circuit are disclosed. An example method includes regulating pull down voltage from a write assist circuit having a write assist capacitor coupled to a discharge node coupled to a bit line. The write assist circuit further includes a transistor to receive an enable signal to couple the bit line to a low voltage rail. A voltage source is provided to charge the capacitor. The voltage produced by the voltage source is limited to limit the pull down voltage at the discharge node from the write assist capacitor.

REFERENCES:
patent: 6671201 (2003-12-01), Masuda
patent: 6751152 (2004-06-01), Hsu et al.
patent: 2007/0081379 (2007-04-01), Clinton et al.
patent: 2007/0268738 (2007-11-01), Heinrich-Barna et al.
U.S. Appl. No. 11/234,346 entitled “Write Assist for Latch and Memory Circuit”, filed Sep. 23, 2005, 22 pages.

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