Methods and apparatus for thermally assisted programming of...

Details Methods and apparatus for thermally assisted programming of... Methods and apparatus for thermally assisted programming of...

2006-05-05

2008-11-25

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07457149

ABSTRACT:
A magnetic memory device comprises a magnetic memory cell that includes a pinned layer and a free layer separated from the pinned layer by an insulating layer. The magnetic memory device also comprises a thermal plate in contact with the free layer. The magnetic memory device can be configured so that a first current flows through the thermal plate heating the thermal plate. The magnetic behavior of the free layer can be altered due to the heating caused by the first current, making it easier to switch the orientation and magnetization of the free layer. A second current can then flow through a bit line near the free layer generating a magnetic field sufficient to switch the orientation of magnetization of the free layer.

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patent: 6865105 (2005-03-01), Tran
patent: 6980468 (2005-12-01), Ounadjela
patent: 7092283 (2006-08-01), Jeong et al.
patent: 7110287 (2006-09-01), Huai et al.
patent: 7286395 (2007-10-01), Chen et al.
patent: 7323732 (2008-01-01), Ho et al.

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