Methods and apparatus for resputtering process that improves...

Details Methods and apparatus for resputtering process that improves... Methods and apparatus for resputtering process that improves...

2007-07-30

2011-10-25

Neckel, Alexa (Department: 1723)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192320, C204S192350, C204S192370, C438S424000, C438S485000

Reexamination Certificate

active

08043484

ABSTRACT:
Conductive or barrier material is deposited on a semiconductor substrate having recessed features by a method that has at least two operations. The first operation involves depositing a layer of the material on at least a portion of the field regions of the wafer. The second operation involves resputtering at least the layer residing on the field region of the wafer under high pressure. If the pressure is sufficiently high, momentum transfer reflection of the resputtered material will take place, such that at least some of the resputtered material is placed in the recessed features of the wafer. This approach can, among other advantages, offer improved step coverage and better utilization of the material.

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