Methods and apparatus for removing photoresist mask defects in a

Details Methods and apparatus for removing photoresist mask defects in a Methods and apparatus for removing photoresist mask defects in a

1997-03-07

1999-11-09

Breneman, Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 72, 438710, H01L 2100

Patent

active

059807687

ABSTRACT:
In a plasma reactor, a method for removing photoresist mask defects, which includes introducing a substrate having thereon a photoresist mask into the plasma reactor. The method further includes flowing into the plasma reactor an etchant source gas comprising nitrogen. The etchant source gas is substantially oxidant-free. The method also includes removing the photoresist mask defects employing a plasma struck with the etchant source gas.

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