Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-06-28
1999-05-18
Dang, Thi
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438729, 438730, 216 67, 216 68, 156345, H01L21/00
Patent
active
059045710
ABSTRACT:
An apparatus and method in a plasma processing chamber for reducing charging of a wafer is described. A plasma generating element is configured to cause a plasma including ions and free radicals to be formed in a plasma generating region. A plasma diffusion region is configured so that plasma generated in the plasma generating region can diffuse through the plasma diffusion region. A conductive grid is positioned within the plasma diffusion region between the wafer and the plasma generating region. The conductive grid includes a mesh which is configured to trap a portion of the ions so that a portion of the ions are prevented from diffusing through the diffusion region to reach the wafer.
REFERENCES:
patent: 5315145 (1994-05-01), Lukaszek
Chou Wen-Ben
Fallahpour Kambiz
Jones Phillip L.
Patrick Roger
Yang Yun-Yen
Dang Thi
LAM Research Corp.
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