Static information storage and retrieval – Read/write circuit – Including specified plural element logic arrangement
Reexamination Certificate
2007-07-10
2007-07-10
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including specified plural element logic arrangement
C365S230060
Reexamination Certificate
active
11152982
ABSTRACT:
Techniques for reducing power when reading a full-swing memory array are disclosed. The full-swing memory array includes a plurality of local bit lines and a global bit line. In order to reduce power consumption, a method of driving the global bit line includes the step of coupling the plurality of local bit lines to the global bit line through a plurality of tri-state devices. The method further includes the steps of generating a global select signal to enable one of the plurality of tri-state devices and selecting a corresponding local bit line to drive the output of the enabled tri-state device. In this way, the global bit line is statically driven so that consecutive reads of bits having the same value read over the global bit line do not result in transitioning the state of the global bit line.
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Burda Gregory Christopher
Fischer Jeffrey Herbert
Kolla Yeshwant N.
Agusta Joseph B.
Ciccozzi John L.
Nguyen Tan T.
Pauley Nicholas J.
QUALCOMM Incorporated
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