Methods and apparatus for plasma processing

Details Methods and apparatus for plasma processing Methods and apparatus for plasma processing

2000-01-24

2000-12-05

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

156345, 438714, 438729, H01L 2100

Patent

active

061566675

ABSTRACT:
The reliability of a plasma processing chamber has been increased using a heat moderating material to facilitate controlling heat removal from dielectric parts of the plasma chamber. The heat moderating material performs at least one of the functions: moderating heat transfer rate and functioning as a heat spreader. The heat moderating material allows removal of heat from the dielectric so that the dielectric maintains temperatures that result in negligible corrosion to the dielectric and the dielectric maintains temperature gradients that minimize thermal stress induced breakage of the dielectric.

REFERENCES:
patent: 4971653 (1990-11-01), Powell et al.

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