Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Patent
1991-06-17
1992-08-11
Griffin, D.
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
427 541, H01G 406, B05D 306
Patent
active
051385201
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The invention relates to methods for depositing high quality films of complex (compound) materials on substrates at high deposition rates, and apparatus for effecting such methods. Particularly, the invention relates to photo/plasma-enhanced, rapidly thermally pulsed metallorganic chemical vapor deposition from stabilized compound sources depositing high quality, stoichiometrically-correct, thin films of a large variety of complex compounds at high deposition rates, and computer controlled apparatus for effecting such methods.
BACKGROUND ART
There are known methods for depositing thin films of complex compounds such as metal oxides, ferroelectrics, super-conductors, materials with high dielectric constants, gems, etc. Such known methods include RF sputtering, chemical vapor deposition (CVD), and spin coating.
DISCLOSURE OF INVENTION
A first embodiment provides a method and apparatus for depositing a thin film on a substrate, comprising the steps of: providing a substrate in an enclosed deposition chamber; introducing at least one vaporized compound source into the chamber at a controlled flow rate; and controlling first means to apply a spectral energy bath to the source within the chamber in a controlled manner to dissociate at least one component from the source and to permit the component to be deposited on the substrate. The bath is tuned to provide optimal energy for dissociating the component from the vaporized source.
A second embodiment provides a method and apparatus for depositing a stoichiometrically-correct thin film on a substrate, comprising the steps of: providing a substrate in an enclosed deposition chamber; introducing at least one substantially stoichiometrically-correct vaporized compound source into the chamber; applying a radio frequency bias in the chamber; applying a direct current bias in the chamber; applying a spectral energy bath to the source within the chamber in a controlled manner to dissociate at least one component from the source and to permit the component to be deposited on the substrate in a stoichiometrically-correct manner; and tuning the bath to provide an optimum energy for dissociating the component from the source.
The invention uses the first and/or second embodiments to produce thin film from stabilized compound sources including, but not limited to, ceramics, glasseous materials, electrically-active materials, and/or ferroelectric materials, such as stabilized sol-gel or MOD (metallorganic decomposition) formulations having a general composition of ABO.sub.3, including PbTiO.sub.3, Pb.sub.x Zr.sub.y Tio.sub.3, Pb.sub.x La.sub.y Zr.sub.s TiO.sub.3, YMnO.sub.3 where Y represents any rare-earth element, and TiYMnO.sub.3.
BRIEF DESCRIPTION OF DRAWINGS
FIG. 1 is a schematic view of a CVD apparatus according to a first embodiment.
FIG. 2 is a flow chart of the first embodiment.
FIG. 3 is a schematic of a second embodiment.
FIG. 4 is a perspective view of the second embodiment.
MODES FOR CARRYING OUT THE INVENTION
FIG. 1 shows a first embodiment of a low pressure CVD apparatus 1 according to the invention. Apparatus 1 includes a deposition chamber 2, a substrate holder 4 which supports one or more substrates 6, a vaporized source manifold 14 for introducing a vaporized source(s) into chamber 2, first, second and third means 8, 10, 12 for applying spectral energy and/or heat to chamber 2, liquid, solid and gaseous feed units 16, 22, 28 for introducing vaporized compound sources into manifold 14, a vacuum pump 30 cooperating with chamber 2, an analyzer 32 for analyzing the composition of gases exhausted from chamber 2, a cooling unit 34 for cooling chamber 2, pressure and temperature sensors 33, 35, and a computer control unit 36 to precisely control apparatus 1.
Units 16, 22, 28 generate and feed a vaporized source of at least one compound into manifold 14, which in turn feeds the vaporized source into chamber 2. Unit 16 includes at least one liquid source container 20 and at least one carrier gas source 18 which is passes through the liqu
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McMillan Larry D.
Paz De Araujo Carlos A.
Carrier Joseph P.
Griffin D.
Petrik Robert M.
Symetrix Corporation
Weiner Irving M.
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