Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2007-02-20
2007-02-20
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S298180, C204S298190, C204S298200
Reexamination Certificate
active
10735987
ABSTRACT:
In one embodiment, a magnetron sputtering apparatus forms a closed plasma loop and an open plasma loop within the closed plasma loop. The open plasma loop allows for relatively uniform erosion on the face of a target by broadening the sputtered area of the target. The open plasma loop may be formed and swirled using a rotating magnetic array to average the target erosion.
REFERENCES:
patent: 4622121 (1986-11-01), Wegmann et al.
patent: 4865712 (1989-09-01), Mintz
patent: 5171415 (1992-12-01), Miller et al.
patent: 5188717 (1993-02-01), Broadbent et al.
patent: 5252194 (1993-10-01), Demaray et al.
patent: 5314597 (1994-05-01), Harra
patent: 5482611 (1996-01-01), Helmer et al.
patent: 5593551 (1997-01-01), Lai
patent: 6132576 (2000-10-01), Pearson
patent: 6179973 (2001-01-01), Lai et al.
patent: 6193854 (2001-02-01), Lai et al.
patent: 6432285 (2002-08-01), Kastanis et al.
patent: 6444105 (2002-09-01), Lai et al.
patent: 6471831 (2002-10-01), Lu et al.
patent: 6491801 (2002-12-01), Gung
patent: 6497796 (2002-12-01), Ashtiani et al.
patent: 6613199 (2003-09-01), Tobin et al.
patent: 6683425 (2004-01-01), Lai
patent: 09-195043 (1997-07-01), None
Hayden Douglas B.
Juliano Daniel R.
McDonald Rodney G.
Novellus Systems Inc.
Okamoto & Benedicto LLP
LandOfFree
Methods and apparatus for magnetron sputtering does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods and apparatus for magnetron sputtering, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and apparatus for magnetron sputtering will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3870646