Methods and apparatus for low power SRAM using evaluation...

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S203000, C365S189011

Reexamination Certificate

active

07423900

ABSTRACT:
Methods and apparatus provide for controlling an SRAM memory, the SRAM memory including a plurality of memory cells arranged in an array of rows (word lines) and columns (bit lines), including: mirroring logic values of at least one of the bit lines to a global bit line; driving the global bit line to a pre-charge logic value in response to a clock signal that cycles at least one time during successive read and write operations to the memory cell; maintaining the global bit line at the pre-charge logic value during a write operation in which a logic value is written to the bit line that is opposite to the pre-charge logic value.

REFERENCES:
patent: 2004/0130926 (2004-07-01), Nakase
patent: 2006/0291300 (2006-12-01), Di Gregorio
patent: 2007/0019461 (2007-01-01), Adams et al.
patent: 2007/0041239 (2007-02-01), Takeda

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