Methods and apparatus for lithography of sparse arrays of sub-mi

Details Methods and apparatus for lithography of sparse arrays of sub-mi Methods and apparatus for lithography of sparse arrays of sub-mi

1995-03-16

1998-06-02

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430313, 430394, G03F 722

Patent

active

057597448

ABSTRACT:
Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

REFERENCES:
patent: 4402571 (1983-09-01), Cowan
patent: 4496216 (1985-01-01), Cowan
patent: 5415835 (1995-05-01), Brueck
SPIE 2197: Optical/Laser Microlithography VII, T.A. Brunner, editor, pp. 869-875 (1994).
J. Vac. Sci. Technol. B 11 (3) , May/Jun. 1993.
AIChE Journal, Dec. 1991, vol. 37, No. 12, pp. 1863-1874.

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