Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1997-02-06
1999-02-23
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429807, 20429809, 20429814, 20429819, C23C 1434
Patent
active
058739890
ABSTRACT:
A magnetron sputtering source for depositing a material onto a substrate includes a target from which the material is sputtered, a magnet assembly disposed in proximity to the target for confining a plasma at the surface of the target and a drive assembly for scanning the magnet assembly relative to the target. The sputtering source may further include an anode for maintaining substantially constant plasma characteristics as the magnet assembly is scanned relative to the target. The anode may be implemented as variable voltage stationary electrodes positioned at or near the opposite ends of the scan path followed by the magnet assembly, spaced-apart anode wires positioned between the target and the substrate or a movable anode that is scanned with the magnet assembly. The magnet elements of the magnet assembly may have different spacings from the surface of the target to enhance depositional thickness uniformity. The target may be fabricated in sections, each having a target element bonded to a backing element for reduced sensitivity to thermal variations. The target may be rotated from a first fixed position to a second fixed position relative to the magnet assembly at least once during its operating life for increased target utilization.
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Davis Gary A.
Hughes John L.
Kolenkow Robert J.
Petersen Carl T.
Pond Norman H.
Cole Stanley Z.
Intevac, Inc.
Nguyen Nam
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