Methods and apparatus for LDMOS transistors

Details Methods and apparatus for LDMOS transistors Methods and apparatus for LDMOS transistors

2011-01-11

2011-01-11

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S492000, C257S493000, C257S339000, C257S557000, C257S611000, C257SE29187, C257SE29261, C257SE21373, C257SE21452, C438S163000, C438S204000, C438S236000, C438S327000, C438S335000

Reexamination Certificate

active

07868378

ABSTRACT:
An LDMOS transistor includes a gate including a conductive material over an insulator material, a source including a first impurity region and a second impurity region, a third impurity region, and a drain including a fourth impurity region and a fifth impurity region. The first impurity region is of a first type, and the second impurity region is of an opposite second type. The third impurity region extends from the source region under the gate and is of the first type. The fourth impurity region is of the second type, the fifth impurity region is of the second type, and the fourth impurity region impinges the third impurity region.

REFERENCES:
patent: 5406110 (1995-04-01), Kwon et al.
patent: 5517046 (1996-05-01), Hsing et al.
patent: 6559504 (2003-05-01), Nishibe et al.
patent: 6825531 (2004-11-01), Mallikarjunaswamy
patent: 6927453 (2005-08-01), Shibib et al.
patent: 2003/0038316 (2003-02-01), Tsuchiko et al.
patent: 2004/0065935 (2004-04-01), Lee et al.
patent: 2004/0238913 (2004-12-01), Kwon et al.
patent: 2005/0110080 (2005-05-01), Arnborg et al.
patent: 2006/0113625 (2006-06-01), Bude et al.
patent: 2007/0007591 (2007-01-01), Theeuwen et al.
patent: 2007/0296022 (2007-12-01), Lu et al.

Affiliated with

Also associated with

Rating

Methods and apparatus for LDMOS transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods and apparatus for LDMOS transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and apparatus for LDMOS transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2673941