Methods and apparatus for inspecting contact openings in a...

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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C156S345250, C204S298320

Reexamination Certificate

active

06979579

ABSTRACT:
In a plasma processing system, a method of inspecting a contact opening of a contact formed in a first layer of the substrate to determine whether the contact reaches a metal layer that is disposed below the first layer is shown. The method includes flowing a gas mixture into a plasma reactor of the plasma processing system, the gas mixture comprising a flow of a chlorine containing gas. The method also includes striking a plasma from the gas mixture; and exposing the contact to the plasma. The method further includes detecting whether metal chloride is present in the contact opening after the exposing.

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patent: 2001/0023991 (2001-09-01), Kakuhara
patent: 2-172224 (1990-07-01), None
patent: 4-106921 (1992-04-01), None

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