Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-09-07
2008-03-04
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S414000, C257S418000, C257S424000, C257SE21335, C257SE29255
Reexamination Certificate
active
07339214
ABSTRACT:
Methods and apparatus are disclosed for selectively inducing stress in a semiconductor device, wherein a first region of a substrate is implanted so as to induce stress in a second region. An electrical device is formed at least partially in the second region, wherein the induced stress therein may improve one or more operational characteristics of the device, such as channel region carrier mobility.
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Joyner Keith A.
Wasshuber Christoph
Brady III W. James
Erdem Fazli
Purvis Sue A.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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