Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-12-08
2010-02-16
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S714000, C156S345340
Reexamination Certificate
active
07662723
ABSTRACT:
A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a gas distribution system. The plasma processing system also includes a gas flow control assembly coupled to the gas distribution system and configured to control a set of input gases provided by the gas distribution system. The plasma processing system further includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate.
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Hwang Guang-Yaw
Lui Pu-Lun
Yang Yu-Wei
IP Strategy Group, P.C.
Lam Research Corporation
Vinh Lan
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