Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-06-27
2000-07-11
Gulakowski, Randy
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
216 67, H01L 213213
Patent
active
060872667
ABSTRACT:
A method for improving microloading of a substrate to be etched in a plasma processing chamber. The substrate is etched with a first etchant to form trenches having a given trench width. The plasma processing chamber has a first power supply configured to energize a first electrode of the chamber and a second power supply configured to energize a second electrode of the chamber. The method includes obtaining a first data set among a plurality of data sets correlating power ratios of the first power supply and the second power supply with microloading percentages for the first etchant for different trench widths. The first data set correlates the power ratios with the microloading percentages for a first trench width. The first trench width approximates the given trench width as closely as possible. The method also includes extrapolating a second data set from the first data set. The second data set correlates the power ratios with the microloading percentages for the given trench width. There is also included ascertaining a power ratio of the power ratios of the second data set that yields a desired level of microloading. Additionally, there is included setting a first setting of one of the first power supply and the second power supply in accordance with the power ratio to achieve the desired level of microloading.
REFERENCES:
patent: 4267012 (1981-05-01), Pierce et al.
patent: 4740485 (1988-04-01), Sharpe-Geisler
patent: 4878994 (1989-11-01), Jucka et al.
patent: 4980018 (1990-12-01), Mu et al.
patent: 5256245 (1993-10-01), Keller et al.
patent: 5320707 (1994-06-01), Kanekiyo et al.
patent: 5326427 (1994-07-01), Jerbic
patent: 5356478 (1994-10-01), Chen et al.
patent: 5411631 (1995-05-01), Hori et al.
patent: 5429070 (1995-07-01), Campbell et al.
patent: 5496762 (1996-03-01), Sandhu et al.
patent: 5522520 (1996-06-01), Kawamoto
patent: 5540812 (1996-07-01), Kadomura
patent: 5545289 (1996-08-01), Chen et al.
patent: 5562801 (1996-10-01), Nulty
patent: 5609775 (1997-03-01), Liu
patent: 5620615 (1997-04-01), Keller
patent: 5779926 (1998-07-01), Ma et al.
patent: 5883007 (1999-03-01), Abraham et al.
patent: 5904862 (1999-05-01), Alterio et al.
patent: 6017825 (2000-01-01), Kim et al.
Carter et al., "Transformer Coupled Plasma Etch Technology for the Fabrication of Subhalf Micron Structures," Jul. 1, 1993, Journal of Vacuum Science & Technology: Part A, vol. 11, No.4, Part 1, pp. 1301-1306.
"Notification of Transmittal of the International Search Report," Oct. 16, 1998, European Patent Office.
"International Search Report," Oct. 16, 1998, European Patent Office.
Riley, P; Holbert, R; Kavari, R; and Lujan, L., "Composite metal etching for submicron integrated circuits" Extented Abstracts, vol. 93, No. 1, May 1993, Princeton, NJ.
Riley, P; Peng, S; and Fang, L., "Plasma Etching of Aluminum for ULSI Circuits", Solid State Technology, vol. 36, No. 2, Feb. 1993, Washington.
Gottscho, R.S; Jurgensen, C.W; Vitkavage, D.J., "Microscopic Uniformity in Plasma Etching", Journal of Vacuum Science and Technology B, Microelectronic Process and Phenomomena, vol. 10, No. 5, Oct. 1992, pp. 2133-2147.
Patent Abstracts of Japan, vol. 95, No. 6, Jul. 31, 1995.
T.H. Ahn; S.W. Nam; K.J. Min; and Chung, C., "Effect of Residual Gases on Residue Formation during Tungsten/TiN/Ti Etching Using SF.sub.6 and Cl.sub.2 Gas Chemistry," Jpn. J. Appl. Phys. vol. 33 (1994) pp. L918-L920, Part 2, No. 7A, Jul. 1, 1994.
Ahmed Shamim
Gulakowski Randy
Lam Research Corporation
LandOfFree
Methods and apparatus for improving microloading while etching a does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods and apparatus for improving microloading while etching a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and apparatus for improving microloading while etching a will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-541990