Methods and apparatus for gas-assisted thermal transfer with a s

Details Methods and apparatus for gas-assisted thermal transfer with a s Methods and apparatus for gas-assisted thermal transfer with a s

1983-06-09

1985-09-17

Anderson, Bruce C.

Radiant energy

Inspection of solids or liquids by charged particles

Analyte supports

2504401, G01N 2100

Patent

active

045422982

ABSTRACT:
Methods and apparatus for differential pumping of a thermal transfer gas used to transfer thermal energy between a semiconductor wafer and a platen during processing in a vacuum chamber. Housing structure defines an intermediate region adjacent to and surrounding the platen. The gas, which is introduced into a thermal transfer region behind the wafer, is restricted from flowing into the intermediate region by intimate contact between the wafer and the platen. A clamping ring, which clamps the wafer to the platen, and a bellows coupled between the clamping ring and the housing restrict flow of gas from the intermediate region to the vacuum chamber. The intermediate region is vacuum pumped to a pressure lower than the pressure in the thermal transfer region whereby leakage of the gas into the vacuum chamber is reduced.

REFERENCES:
patent: 3062507 (1962-11-01), Andrus
patent: 3566960 (1969-08-01), Stuart
patent: 4264762 (1981-04-01), King
patent: 4282924 (1981-08-01), Faretra
King et al., "Experiments on Gas Cooling of Wafers," Nucl. Instrum. Methods, 189, (1981), pp. 169-173.
Hammer, "Cooling Ion Implantation Target," IBM Technical Disclosure Bulletin, vol. 19, No. 6, Nov. 1976.

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