Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Patent
1996-07-09
1998-12-08
Nuzzolillo, M.
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
216 75, 216 76, 216 67, 438710, 438715, 438737, 438738, C23F 100
Patent
active
058464433
ABSTRACT:
A method in a plasma processing chamber, for etching through a selected portion of an aluminum-containing layer and a titanium-containing layer. The titanium-containing layer is disposed above the aluminum-containing layer. The method includes a first etching step that etches at least partially through the titanium-containing layer using a first source gas composition. The first source gas composition consists essentially of the Cl.sub.2 etchant and a first mixture. The first mixture consists essentially of HCl and CHF.sub.3. The first source gas composition has a first flow ratio of the Cl.sub.2 etchant to the first mixture. There is further included a second etching step that etches at least partially through the aluminum-containing layer using a second source gas composition. The second source gas composition consists essentially of a Cl.sub.2 etchant and a second mixture. The second mixture consists essentially of HCl and CHF.sub.3. The second source gas composition has a second flow ratio of the Cl.sub.2 etchant to the second mixture different from the first flow ratio.
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Lam Research Corporation
Nuzzolillo M.
VerSteeg Steven H.
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