Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-02-15
1999-12-21
Goodrow, John
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438738, 438742, 438952, 216 72, H01L 21302
Patent
active
060048840
ABSTRACT:
A method for etching a TiN layer of a wafer stack in a plasma processing chamber. The method includes the step of etching at least partially through the TiN layer using a first chemistry, which preferably includes a TiN etchant, a noble gas, and a polymer-forming chemical. In one embodiment, the TiN etchant is Cl.sub.2, the noble gas is argon, and the polymer-forming chemical is CHF.sub.3.
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Goodrow John
Lam Research Corporation
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