Methods and apparatus for etching metal layers on substrates

Details Methods and apparatus for etching metal layers on substrates Methods and apparatus for etching metal layers on substrates

2006-03-28

2006-03-28

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S715000, C216S072000

Reexamination Certificate

active

07018934

ABSTRACT:
Method and apparatus for etching a metal layer disposed on a substrate, such as a photomask, are provided. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising (i) hydrogen chloride, (ii) an oxygen containing gas, (iii) another chlorine containing gas, and optionally, (iv) an inert gas into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch exposed portions of the metal layer disposed on the substrate.

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