Methods and apparatus for etching mercury cadmium telluride

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156635, 156646, 156656, 1566591, 156662, 20419235, 252 791, 437228, H01L 21306, B44C 122, C23F 102, C09K 1300

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active

050008200

ABSTRACT:
A workpiece (W) is placed within a reaction chamber (12). The chamber (12) is evacuated (18) to a relatively low pressure such as 10 torr. An organic or nitrogen-based free radical precursor compound (36) is introduced into the reactor (12). A volume of the chamber (12) adjacent to the workpiece (W) is illuminated (28) with energy made up of one or more wavelengths in the range of about 200 to about 1300 nanometers such that an exposed surface (23) of the layer is illuminated (28). The free radical precursor compound is photodissociated in response to the illumination. Resulting free radicals are reacted with the exposed surface (23) of the workpiece (W) to create volatile compounds, which are removed from the chamber through a vacuum source (18).

REFERENCES:
patent: 4822450 (1989-04-01), Davis et al.
Plasma Quest, inc., Innovative Solutions Using Plasma Technologies, Plasma Quest, Feb. 12, 1988.
Plasma Quest/Free Radical Reactor, Innovative Solutions Using Plasma Technologies, Plasma Quest, Feb. 12, 1988.
Haag et al., "Etching of Metals by Means of Organic Radicals", Plasma Chemistry and Plasma Processing, vol. 6, No. 3, 1986, pp. 197-202.
Morrison et al., Organic Chemistry, Third Edition, Jul., 1976, "Coupling of Alkyl Halides with Organometallic Compound", Sec. 3.17, pp. 92-93.

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