Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-03-19
1998-12-15
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438713, 438714, 438720, 438742, 216 67, 257775, H01L 2100
Patent
active
058496416
ABSTRACT:
A method in a substrate processing chamber for forming a conductive feature by etching through a conductive layer disposed above a semiconductor substrate. The method includes etching at least partially through the conductive layer using a first etch recipe to form a top portion of the conductive feature. The method further includes thereafter etching at least partially through a remaining thickness of the conductive layer using a second etch recipe different from the first etch recipe to form a bottom portion of the conductive feature. The bottom portion is disposed below the top portion. The second etch recipe is configured to yield a sloped etch foot in the bottom portion of the conductive feature.
REFERENCES:
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4350563 (1982-09-01), Takada et al.
patent: 4370196 (1983-01-01), Vossen, Jr. et al.
patent: 4373990 (1983-02-01), Porter
patent: 4798650 (1989-01-01), Nakamura et al.
patent: 4838992 (1989-06-01), Abraham
patent: 5126008 (1992-06-01), Levy
patent: 5185058 (1993-02-01), Cathey, Jr.
patent: 5207868 (1993-05-01), Shinohara
patent: 5211804 (1993-05-01), Kobayashi
patent: 5387556 (1995-02-01), Xiaobing et al.
patent: 5530488 (1996-06-01), Webb
patent: 5688723 (1997-11-01), Okamoto et al.
R.S. Bennet et al., "Process for Reactive Ion Etching of Polycide," IBM Disclosure Bulletin, vol. 24, No. 9, Feb. 1982, New York, p. 4486.
Unknown, "Patent Abstracts of Japan", vol.018, No. 477 (E-1602), & JP 06 163538A, Sumitomo Metal Ind Ltd., Oct. 6, 1994 (Publication date).
Unknown, "Patent Abstracts of Japan", vol. 018, No. 392 (C-1228), & JP 06 108272A, Sumitomo Metal Ind. Ltd., 19, Apr. 1994 (Publication date).
R.A. Gottscho, C.W. Jurgensen, and D.J. Vitkavage, "Microscopic Uniformity in Plasma Etching," J. Vac. Sci. Technol. B 10(5), pp. 2133-2147 (1992).
T. Sato, N. Fujiwara, and M. Yoneda, "Mechanism of Reactive Ion Etching Lag for Aluminumm Alloy Etching," Jpn. J. Appl. Phys. 34 (Pt. 1 No. 4B), pp. 2142-2146 (1995).
Y. Kusumi, N. Fujiwara, J. Matsumoto, and M. Yoneda, "Effect of N.sub.2 Addition on Aluminum Alloy Etching by Electron Cyclotron Resonnance Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching," Jpn. J. Appl. Phys. 34 (Pt. No. 4B), 2147-2151 (1995).
N. Fujiwara, J. Sawai, M. Yoneda, K. Nishioka, and H. Abe, "ECR Plasma Etching with Heavy Halogen Ions," Jpn. J. Appl. Phys. 29 (No. 10), 2223-2228 (1995).
P.E. Riley, S.S. Peng, anf l.Fang, "Plasma Etching of Aluminum for ULSI Circuits," Solid State Technology, pp. 47-55, Feb. 1993.
H.C. Jones, R. Bennett, and J. Singh, "Size Dependant Etching of Small Shapes," Proc. 8th Plasma Symp., ECS vol. 90-2, pp. 45-58 (1990).
N. Kofuji, K. Tsujimoto, T. Kumihashi, and S. Tachi, "Reduction in Microloading by High-Gas-Flow-Rate Electron Cyclotron Resonance Plasma Etching," Jpn. J. Appl. Phys. 34 (Pt. 1 No. 5A), pp. 2489-2494 (1995).
Arnett David R.
Musser Jeffrey V.
Lam Research Corporation
Powell William
LandOfFree
Methods and apparatus for etching a conductive layer to improve does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods and apparatus for etching a conductive layer to improve , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and apparatus for etching a conductive layer to improve will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1457471