Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-24
2010-12-21
Graybill, David E (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S679000, C257SE21161, C257SE21169, C257SE21295
Reexamination Certificate
active
07855147
ABSTRACT:
Copper seed layers are formed on diffusion barrier layers (e.g., on Ta, and TaNxlayers) without significant agglomeration of copper, with the use of an engineered barrier layer/seed layer interface. The engineered interface includes an adhesion layer, in which copper atoms are physically trapped and are prevented from migrating and agglomerating. The adhesion layer can include between about 20-80% atomic of copper. The copper atoms of the adhesion layer are exposed during deposition of a copper seed layer and serve as the nucleation sites for the deposited copper. Thin, continuous, and conformal seed layers can be deposited on top of the adhesion layer. The trapping of copper within the adhesion layer is achieved by intermixing diffusion barrier and seed layer materials using PVD and/or ALD.
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paten
Dulkin Alexander
Greer Frank
Pradhan Anshu A.
Rairkar Asit
Rozbicki Robert
Graybill David E
Novellus Systems Inc.
Weaver Austin Villeneuve & Sampson LLP
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