Methods and apparatus for detecting pattern dependent charging o

Details Methods and apparatus for detecting pattern dependent charging o Methods and apparatus for detecting pattern dependent charging o

1997-04-23

1999-02-09

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 48, 257316, 257317, 257321, 257379, 438 17, 438 18, H01L 31115, H01L 29788

Patent

active

058698779

ABSTRACT:
A charge monitoring apparatus measures an electrical charge deposited on a multiple-layered workpiece, such as a semiconductor wafer, in a plasma processing system. The apparatus includes a charge collection electrode (CCE), a non-conducting patterned layer and a voltage or current sensor. The patterned layer is provided on the CCE and includes a plurality of openings that extend through the patterned layer to the conducting surface of the CCE. The openings create a topology having an adequate aspect ratio to cause electron shading to occur during plasma processing of the workpiece. The voltage or current sensor includes an EEPROM transistor that stores information regarding the amount of electrical charge that accumulates on the CCE during plasma processing.

REFERENCES:
patent: 5315145 (1994-05-01), Lakaszek
Lukaszek et al., Characterization of Wafer Charging Mechanisms and Oxide Survival Prediction Methodology, 1994 IEEE/IRIPS.
Fang et al., A Mechanism for Gate Oxide Damage in Nonuniform Plasmas, Center for Integrated Systems, Stanford University.
Hashimoto, Charge Damage Caused by Electron Shading Effect, LSI Wafer Process Division, Fujitsu Ltd., Part 1, No. 10, Oct. 1994.
Shideler et al., A New Technique for Solving Wafer Charging Problems., Semiconductor International, Jul. 1995.

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