Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2008-05-13
2008-05-13
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
Reexamination Certificate
active
11059280
ABSTRACT:
Methods and apparatus are provided for decreasing soft errors and cell leakage in integrated circuit structures. The structures of the invention preferably include memory cells that utilize thin-film transistors (“TFTs”) for the pull-up and pull-down transistors, and well as for the pass-gates. These TFTs preferably include features such as ion implants and a dielectric with a high dielectric constant “K.” In addition to reducing soft errors and cell leakage, the invention preferably provides other benefits such as low cell area and scalability.
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Huang Cheng-Hsiung
Lu Yow-Juang B
O Hugh S
Shih Chih-Ching
Jackson Robert R.
La Chia-Hao
Le Thong Q.
Ropes & Gray LLP
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