Methods and apparatus for cleaning semiconductor devices

Details Methods and apparatus for cleaning semiconductor devices Methods and apparatus for cleaning semiconductor devices

2007-12-25

2007-12-25

Tran, Binh X. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S727000, C438S728000, C438S730000, C438S732000

Reexamination Certificate

active

10918047

ABSTRACT:
Methods and apparatus for cleaning a semiconductor device are disclosed. A disclosed method comprises forming a capping layer on top of a substrate including a bottom interconnect layer; depositing and patterning an insulating layer on the capping layer to form a damascene structure; etching a portion of the capping layer exposed by the damascene structure; and (d) removing polymers and copper impurities due to the etching by using a HF vapor gas.

REFERENCES:
patent: 5336356 (1994-08-01), Ban et al.
patent: 5744402 (1998-04-01), Fukazawa et al.
patent: 5954911 (1999-09-01), Bergman et al.
patent: 6065481 (2000-05-01), Fayfield et al.
patent: 6299724 (2001-10-01), Fayfield et al.
patent: 6329293 (2001-12-01), Tien et al.
patent: 6841467 (2005-01-01), Inoue
Wolf, Silicon Processing for the VLSI Era, 2002, Lattice Press, vol. 4, p. 643.
Definition of the term “solution” using http://dictionary.reference.com/browse/solution ; 2 pages; 2006.

Affiliated with

Also associated with

Rating

Methods and apparatus for cleaning semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods and apparatus for cleaning semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and apparatus for cleaning semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3864551