Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2009-05-19
2011-11-01
Fulk, Steven (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21242
Reexamination Certificate
active
08048814
ABSTRACT:
A method of aligning a set of patterns on a substrate, the substrate including a substrate surface, is disclosed. The method includes depositing a set of silicon nanoparticles on the substrate surface, the set of nanoparticles including a set of ligand molecules including a set of carbon atoms, wherein a first set of regions is formed where the silicon nanoparticles are deposited and the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of silicon nanoparticles into a thin film wherein a set of silicon-organic zones are formed on the substrate surface, wherein the first set of regions has a first reflectivity value and the second set of regions has a second reflectivity value. The method further includes illuminating the substrate surface with an illumination source, wherein the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1.
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Antoniadis Homer
Burrows Michael
Meisel Andreas
Foley & Lardner LLP
Fulk Steven
Innovalight, Inc.
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